Tag Archives: Narrow Pitch

Imec Develops Narrow Pitch Interconnects

Imec created the first electrically functional copper lines embedded into silicon oxide using a spacer-defined double patterning approach. According to imec, this is a major step towards 20nm half pitch interconnects. Spacer-defined (or self-aligned) double patterning has recently gained interest as the patterning technique for future FLASH memory devices. Memory vendors will benefit from this research.

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