Tag Archives: FET

Imec Double Heterostructure FET for GaN-on-Si Power Switching Devices

Imec announced an innovative, simple, and robust GaN-on-Si double heterostructure FET (field effect transistor) architecture for GaN-on-Si power switching devices. The architecture meets the normally off requirements of power switching circuits and is characterized by low leakage and high breakdown voltage, both essential parameters to reduce the power loss of high-power switching applications.

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