SEMATECH and ISMI Presentations at SPIE Advanced Lithography 2010

At SPIE Advanced Lithography 2010, SEMATECH will discuss issues and solutions in preparing extreme ultraviolet lithography (EUVL) for high-volume manufacturing. The SPIE Advanced Lithography conference will take place February 21-25 in San Jose, CA. SEMATECH will show how they are enabling EUV mask and resist/materials infrastructure as well as EUVL manufacturing feasibility and affordability. The SEMATECH Lithography Program is based at the College of Nanoscale Science and Engineering’s (CNSE) Albany NanoTech Complex.

A leading topic at SPIE will be EUVL mask infrastructure, an area in which SEMATECH has proposed a new industry consortium. Advances in EUV resist development – including SEMATECH’s success with its 0.3 numerical aperture (NA) microexposure tools (MET) at CNSE and the University of California at Berkeley – also will be featured. Other SEMATECH papers will cover particle removal and inspection for EUV masks, and metrology techniques for optical defect inspection and double patterning. SEMATECH and ISMI presentations at SPIE include:

EUVL Mask Infrastructure

  • E-beam correction methodology for compensation of mask nonflatness in EUVL pilot line
  • An inspection and defect review strategy for EUV pilot line and high-volume manufacturing

Resist

  • Characterization of promising resist platforms for sub-30-nm HP manufacturability and EUV-CAR extendibility study
  • Thin EUV resist and underlayer stacks: correlating Tg, surface polarity, density, and image quality
  • Development of an inorganic-based photoresist for DUV, EUV, and e-beam imaging
  • The SEMATECH Berkeley MET pushing EUV development beyond 22 nm half pitch

Particle Removal and Mask Inspection

  • A study of defects on EUV mask using blank inspection, patterned mask inspection, and wafer inspection
  • Particle removal challenges of EUV patterned masks for the sub-22-nm HP node
  • Particle protection capability of SEMI compliant EUV dual pod

Metrology, Inspection, and Process Control

  • The limits and extensibility of optical patterned defect inspection
  • LER/LWR detection using dark-field spectroscopic methods
  • CD-SEM utility with double patterning (poster session)
  • Reconstruct FinFET cross section using CD-SAXS (poster session)
  • Electron-beam-induced photoresist shrinkage influence on 2D profiles
  • Reference material (RM) 8820: a versatile new NIST standard for nanometrology

Other Topics

  • Modeling carbonization of extreme-ultraviolet optics
  • Characterization of contamination on the illumination optics of the SEMATECH extreme-ultraviolet micro-field exposure tool

More info: SEMATECH