Repetitive Avalanche in Power MOSFETs Risk Factors Webinar

NXP Semiconductors is offering a live webinar on Tuesday, January 19, 2010 at 11:00 am EST (8:00 am PST, 16:00 GMT). The webcast is titled Understanding the Risk Factors Associated with Repetitive Avalanche in Power MOSFETs. The online seminar will be presented by Edgar Ayerbe (NXP Product Marketing Engineer) and Phil Ellis (Concept Engineer).

As Power MOSFET vendors increase the switching speed of their MOSFETs, voltage transients related to the high di/dt, and the parasitic inductances of PCB layouts become more difficult for the designer to control. The webinar will examine the risk factors associated with repetitive avalanche.

NXP Power MOSFET Webinar Topics

  • Describe potential failure mechanisms within the MOSFETs structure due to avalanche
  • Show how these failure mechanisms are minimized with NXP Trench MOSFETs
  • Discuss how to avoid common application pitfalls which cause avalanche
  • Demonstrate how to estimate the repetitive avalanche capabilities of NXP MOSFETs

More info: Understanding the Risk Factors Associated with Repetitive Avalanche in Power MOSFETs