IMEC created a new industrial affiliation program (IIAP). The program will focus on the development of GaN technology for both power conversion and solid state lighting applications. An important goal of the program is to lower GaN technology cost by using large-diameter GaN-on-Si and hence by leveraging on the Si scale of economics. IMEC invites integrated device manufacturers and compound semiconductor companies to join the program where they can benefit from a sharing of cost, risk, talent and IP.
IIAP will develop high-voltage, low-loss, high-power switching devices based on large-diameter (up to 200mm) GaN-on-Si technology. Potential applications include high-power switching in solar converters, motor drives, hybrid electrical vehicles, and switch mode power supplies. High-voltage power devices are usually based on Si MOSFET structures. However, for a number of applications, they are reaching intrinsic material limits. GaN-based devices can overcome these limits due to a unique combination of excellent transport properties and high electrical field operation capability.
A second sub-program will exploit GaN-on-Si technology for the development of high-efficiency high-power white LEDs. Key issues are enhancing the external and internal quantum efficiencies and enabling high current operation. III-nitrides in general exhibit excellent light emission properties in a very broad range of the visible and ultraviolet (UV) spectrum. However, LED illumination by these devices can only become broadly acceptable if new volume manufacturing technologies are developed that enable 150lm/W LEDs.
More info: IMEC