X-FAB XH018 0.18 Micrometer CMOS Process for Integrated Hall Sensors
X-FAB Silicon Foundries developed the first foundry process for the production of integrated Hall sensor ICs in 0.18 micrometer technology. The XH018 low-power CMOS process enables the combination of Hall sensor elements with high-voltage devices and Non-Volatile Memory (NVM) options. X-FAB’s XH018 technology for integrated Hall sensor solutions is available today. It comes with comprehensive design support including characterization data and layout examples.
X-FAB’s 0.18 micrometer foundry technology for Hall sensors enables the sensing element to be integrated on the same chip as its control logic and interface circuitry. Due to its small geometry resulting in high integration density, high magnetic sensitivity can be achieved with minimal parasitic effects. On a test chip with a sensor size of 50 by 50 square micrometers, X-FAB has proven a magnetic sensitivity of up to 360 V/(A*T) with high linearity.
X-FAB’s customers gain the many advantages that Hall effect sensors have over traditional mechanical and reed discrete devices. Silicon-based contactless implementation of Hall sensors improves reliability and durability by virtually eliminating mechanical wear. These sensors enable high-precision measurement and analysis of magnetic fields.
Hall sensor technology has been replacing conventional sensing techniques in many applications. X-FAB’s Hall sensor foundry offering is ideal for magnetic field measurements, position control, speed detection, contactless switches, and position and angle sensors. System costs for such applications can be substantially lowered with X-FAB’s integrated approach due to lower part count, simpler assembly, and higher reliability.
More info: X-FAB
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