SEMATECH to Present Research from Front End Processes Program

SEMATECH will present research results in advanced logic and future non-volatile technologies at the International Symposium on VLSI Technology, System and Applications (VLSI-TSA) on April 27-29, 2009 at the Ambassador Hotel in Hsinchu, Taiwan. The papers report progress in areas such as next generation high-k/metal gate (HKMG) materials, advanced flash memory, planar and non-planar CMOS technologies and HKMG defect metrology.

Monday, April 27

  • La-doped Metal/High-K nMOSFET for Sub-32nm HP and LSTP Application – Investigates the suitability of nMOSFETs with the La-doped high-k/metal gate stack to see its suitability for sub-32nm low standby power (LSTP) and high performance applications.
  • Extending spectroscopic ellipsometry for identification of electrically active defects in Si/SiO2/high-k/metal gate stacks – Explores a new method using spectroscopic ellipsometry to non-invasively identify oxygen vacancy defects in the bottom interfacial SiO2 layer of the scaled high-k/metal gate stacks.
  • Reliability Assessment of Low Vt Metal High-k Gate Stacks for High Performance Applications – Describes of reliability characterization techniques and models targeting HKMG lifetime predictions.
  • Additive Mobility Enhancement and Off-State Current Reduction in SiGe Channel pMOSFETs with Optimized Si Cap and High-k Metal Gate Stacks – Demonstrates high mobility pMOSFETs with high quality epitaxial SiGe films selectively grown on Si (100) substrates.

Wednesday, April 29

  • Band Engineered Tunnel Oxides for Improved TANOS-type Flash Program/Erase with Good Retention and 100K Cycle Endurance – Demonstrates, for the first time, that band-engineered tunnel oxides integrated with a high-k/metal gate can improve program, erase, and endurance in charge-trapped flash memory devices.
  • High Mobility SiGe Shell-Si Core Omega Gate PFETs – Explores the use of Omega gate-type pFETs with a SiGe shell (high mobility channel) on a Si core.

More info: SEMATECH