IMEC to Present at SPIE

IMEC will present 26 papers on their advanced semiconductor lithography research and development at SPIE Advanced Microlithography Conference. The papers cover materials, manufacturing process technology, metrology, inspection, process control, optical microlithography, design for manufacturing, and alternative lithographic processes. SPIE will take place February 23 – 27 in San Jose, California.


  • EUV resist requirements, absorbance and acid yield
  • Newly developed positive-tone resists for Posi/Posi double patterning
  • Analysis of the effect of point-of-use filtration on microbridging defectivity
  • Integration of improved develop process for topcoat-less immersion resists
  • EUV resist requirements: absorbance and acid yield
  • Fluorinated polymethacrylates as highly sensitive nonchemically amplified e-beam resists
  • Calibration of physical resist models: methods, usability, and predictive power
  • Statistical simulation of photoresists at EUV and ArF
  • Resist fundamentals for resolution, LER, and sensitivity (RLS) performance tradeoffs and the relation to microbridging defects
  • A method to determine dose to target without metrology ambiguity using model-based data analysis
  • A practical application of Multiple Prameters Profile Characterization (MPPC) using CDSEM on production wafers using Hyper-NA Lithography
  • Contour-quality assessment for OPC model calibration
  • Track optimization and control for 32-nm node double patterning and beyond
  • Overlay metrology for double patterning processes
  • Validation of CD-SEM etching residue evaluation technique for MuGFET structures
  • Diffraction-based overlay metrology: accuracy and performance on multilevel measurements
  • Extreme scaling of optical lithography: overview of process integration issues
  • Advances and challenges in dual-tone development process optimization
  • Ultimate contact-hole resolution using immersion lithography with line/space imaging
  • Comparison of double-patterning methods using Monte Carlo simulation
  • Modeling laser bandwidth for OPC applications
  • Compensation of overlay errors due to mask bending and non-flatness for EUV masks
  • Stability and imaging of the ASML EUV alpha demo tool
  • Measurement and analysis of EUV photoresist related outgassing and contamination
  • Application of pixel-based mask optimization technique for high-transmission attenuated PSM
  • High-precision contouring from SEM image in 32-nm lithography and beyond

More information: IMEC | SPIE