At the SPIE Advanced Lithography 2009, SEMATECH engineers will report their progress on assessing EUV lithography (EUVL) manufacturability and on advancing EUVL extendibility and alternative lithography and will showcase some of their findings in 12 papers demonstrating breakthrough results in exposure tool capability, resist advances, defect-related inspection, reticle handling, and nanoimprint. In addition to the EUV results, ISMI engineers will present on critical dimension-scanning electron microscopy (CD-SEM) metrology and process control. ISMI’s metrology program is focused on the 32 nm and 22 nm generations, to facilitate lithographic innovation, improve manufacturing productivity, and reduce manufacturing costs.
- 4:30 pm, Tuesday, February 24
Nanopit smoothing by cleaning – will introduce a new technique for smoothing pit defects on EUV mask substrates. This technique is based on non-isotropic etch processes.
- 5:30 pm, Tuesday, February 24
Protection efficiency and commercial availability of a standards-compliant EUV reticle handling solution – will present performance results of a commercial carrier, using the world’s most advanced inspection capability of 40 nm polystyrene latex (PSL) equivalent.
- 8:40 am, Wednesday, February 25
SEMATECH research activities on EUV full-field exposure tool – will evaluate the performance of an alpha demo tool (ADT) exposure tool, looking specifically at the status of EUVL and its supporting infrastructure.
- 9:40 am, Wednesday, February 25
Estimation of cost comparison of lithography technologies at the 22 nm half-pitch node – will identify key cost factors for different lithography candidates, investigate their corresponding cost targets, and discuss the cost dependence of different types of integrated devices on lithography technology.
- 3:50 pm, Wednesday, February 25
SEMATECH’s nanoimprint program: a key enabler for nanoimprint introduction – will explore many of the critical aspects of the nanoimprint process and drive key improvements in overlay, template cleaning, and defectivity toward making nanoimprint technology a cost-effective alternative for CMOS development and manufacturing applications.
- 10:50 am, Thursday, February 26
Assessment of EUV resist readiness for 32 nm half-pitch manufacturing and extendibility study of EUV ADT using state-of-the-art resists – will assess EUVL resist readiness for 32 nm half-pitch manufacturability using a full-field ADT scanner and demonstrate ADT extendibility with state-of-the-art EUV resists.
- 1:40 pm, Tuesday, February 24
CD-SEM parameter influence on image resolution and measurement accuracy – will show experimental SEM resolution results, including influences of many different parameters such as SEM focus and stigmation, filter, and threshold levels.
- 4:10 pm, Wednesday, February 25
Phenomenology of electron-beam-induced photoresist shrinkage trends – will examine the readiness of SEM metrology for the challenges presented by both dry and immersion ArF lithographies and will calculate the errors involved in estimating the original CD from the shrinkage trend.
More information: SEMATECH