High Speed NAND Flash Memory

Intel Corporation and Micron Technology Inc. (NYSE:MU) developed high speed NAND flash memory technology that can greatly enhance the access and transfer of data in devices that use silicon for storage. The new technology – developed jointly by Intel and Micron and manufactured by the companies’ NAND flash joint venture, IM Flash Technologies (IMFT) – is five times faster than conventional NAND, allowing data to be transferred in a fraction of the time for computing, video, photography and other consumer applications.

The new high speed NAND can reach speeds up to 200 megabytes per second (MB/s) for reading data and 100 MB/s for writing data, achieved by leveraging the new ONFI 2.0 specification and a four-plane architecture with higher clock speeds. In comparison, conventional single level cell NAND is limited to 40 MB/s for reading data and less than 20 MB/s for writing data.

Micron is currently working with key enablers and partners to build and optimize corresponding system technologies that can take advantage of the new high speed NAND’s improved performance capabilities. At up to five times the performance over conventional NAND, the high speed NAND from Intel and Micron will enable new embedded solutions and removable solutions that can take advantage of high-performance system interfaces, including PCIe and upcoming standards such as USB 3.0.

Intel | Micron High Speed NAND Flash Memory