Freescale recently released the industry’s first MRAM product. NEC also announced a MRAM breakthrough last July. According to NEC, they developed a new magnetoresistive random access memory (MRAM) cell technology suitable for high speed memory macro embedded in next generation system LSIs. The newly developed cell technology includes three key elements; a 2T1MTJ (two transistors and one magnetoresistive tunneling junction) cell structure to accelerate write mode cycle time, a 5T2MTJ cell structure to accelerate read mode cycle time and a write-line-inserted MTJ to reduce write current. The new cell technology realizes added-value, non-volatile MRAM macros that can be substituted for SRAM (static random access memory) macros embedded in system LSIs.
Unlike NEC, Fresscale offers a MRAM product now. According to Freescale, MRAM technology is an ideal memory solution for applications that must permanently store, yet quickly retrieve, critical data. Unlike flash memory, which also keeps data without power, Freescale’s MRAM has faster read and write speeds at 35-nanoseconds with no degradation over time.
To learn more about the new memory technology, checkout their 12-minute on-demand webcast, “Freescale’s MRAM—a New Kind of Memory Chip.” Tell them EDA Blog sent you and you have your choice between two complimentary MRAM samples or a lump of coal (while supplies last). Tough choice, but I think you should go with the MRAM samples.