Tower Semiconductor Powers Biomorphic 3.0-Megapixel Image Sensor

Tower Semiconductor’s Advanced Photo Diode (APD) process powers a new series of CMOS Image Sensors for Biomorphic Microsystems, a supplier of innovative imaging solutions for the cell phone and PDA markets.

Tower’s APD process enables improved optical and electrical performance of ultra-small pixels utilizing deep sub-micron process technologies, thus enabling the manufacture of small, cost-effective camera module solutions. Manufactured at Tower’s Fab2 in 0.18-micron technology, the products utilize Tower’s pixel IP and the company’s optically optimized multilayer metallization (OptiMuM(TM)), which achieves dramatically better optical sensitivity by reducing stack height from silicon to micro-lens.

Designed to fit the stringent requirements from one of the six leading global cell phone manufacturers, these new products provide an excellent solution to the increasing demand for higher image quality on small mobile handsets. The APD process enables reduction of dark current and temporal noise and thus allows perfect images at low light conditions.

Japanese market research firm Techno Systems Research (TSR) estimates the 2008 total market for 3.0-megapixel and 2.0-megapixel CMOS modules to be 50% of the total units, around 300M units.

Source: Tower Semiconductor