EMCORE, Group4 Labs, and the U.S. Air Force Research Labs (AFRL) have demonstrated the world’s first successful fabrication of operational gallium nitride (GaN)-on-Diamond High-Electron-Mobility-Transistor (HEMT) device. AlGaN/GaN epitaxial transistor layers were grown by metal-organic chemical vapor deposition (MOCVD) at EMCORE and atomically attached to chemically vapor deposited (CVD) diamond substrate by Group4 Labs.
The AFRL team fabricated the transistors. The achievement highlights the feasibility of producing GaN-based radio-frequency (RF) devices closely thermally coupled to diamond substrates to maximize heat extraction from these devices. The team expects the technology to improve power density and efficiency of devices operating at high frequencies due to higher packing density and better heat dissipation in the immediate vicinity of the active device area.
The novel process has a wide-range of possible applications, including high performance GaN-based RF devices, high brightness LEDs and Laser Diodes. The work was supported in part by a DARPA-funded Cooperative Agreement between EMCORE and AFRL.
Source: PR Newswire